Rye Brook Capital LLC Buys 41,185 Shares of Roundhill Memory ETF $DRAM

Rye Brook Capital LLC purchased a new stake in shares of Roundhill Memory ETF (BATS:DRAM) during the 3rd quarter, according to its most recent Form 13F filing with the Securities & Exchange Commission. The fund purchased 41,185 shares of the ETF’s stock, valued at approximately $2,486,000. Roundhill Memory ETF accounts for about 1.6% of Rye Brook Capital LLC’s holdings, making the stock its 19th largest position.

A number of other institutional investors have also recently bought and sold shares of the business. Box Hill Private Wealth LLC acquired a new stake in shares of Roundhill Memory ETF during the 3rd quarter valued at $1,022,000. Noble Wealth Management PBC acquired a new position in shares of Roundhill Memory ETF in the third quarter worth $1,220,000. Envestnet Asset Management Inc. purchased a new stake in shares of Roundhill Memory ETF during the second quarter worth $1,409,000. Silicon Valley Capital Partners acquired a new stake in Roundhill Memory ETF during the second quarter valued at $195,000. Finally, Bouchey Financial Group Ltd. purchased a new position in Roundhill Memory ETF in the second quarter valued at about $34,615,000.

Roundhill Memory ETF Stock Up 0.8%

BATS DRAM traded up $0.49 during trading on Wednesday, reaching $60.01. The company’s stock had a trading volume of 21,546,263 shares, compared to its average volume of 42,595,320. Roundhill Memory ETF has a 1-year low of $26.14 and a 1-year high of $81.34. The stock has a 50-day simple moving average of $57.24.

Roundhill Memory ETF (BATS: DRAM) is an exchange-traded fund offered by Roundhill Investments that provides targeted exposure to the memory semiconductor industry. Listed on the Cboe BZX Exchange under the ticker DRAM, the fund is intended to give investors access to companies whose primary business activities are connected to memory chips and related technologies.

The fund focuses on firms operating across the memory semiconductor supply chain, including companies involved in design and development of DRAM and NAND memory, wafer fabrication, packaging and testing, and the manufacture of semiconductor capital equipment and materials.